Efficient SU8 Ashing & Sacrificial Layer Removal

Courtesy of SNU, Korea	Courtesy Of University of Texas at Dallas

Efficient SU-8 Ashing and
sacrificial layer removal

SU-8 photoresist has many remarkable properties that are ideally suited for use in the fabrication of MEMS and microfluidic devices. Among the many merits of this photoresist for MEMS manufacture, is its chemical stability, which makes it difficult to remove. PVA TePla has successfully developed a plasma process and system technology to remove SU-8 with dry plasma ashing. Also for removing sacrificial layers, the isotropic etch property of microwave plasma is of advantage to undercut the top layer.

To Request a Brochure/Literature/Product CD, Click Here

Related Products:
	This series of microwave batch resist ashers ranges from manual to fully automated accommodating wafers from 2" to 8" (50 to 200 mm)
GIGAbatch series
	Fully automatic single wafer resist stripping system for implant resist and MEMS applications for wafers up to 300 mm
GIGAfab A200/300
	Plasma system with large area planar source technology for low temperature ashing of SU-8 and other sensitive organic layers. Used in MEMS fabrication and OLED/PLED development. Holds one 300 mm wafer or four 150 mm wafers
GIGAfab M
	Laboratory or pilot scale bench top microwave system ideal for resist ashing, wafer cleaning and decapsulation of electronic devices
IoN 10