Efficient SU8 Ashing & Sacrificial Layer Removal

Courtesy of SNU, Korea	Courtesy Of University of Texas at Dallas

SU-8 photoresist has many remarkable properties which makes it ideal for the fabrication of MEMS and microfluidic devices. Among the many merits of this photoresist for MEMS manufacture is its chemical stability, which makes it difficult to remove.

PVA TePla has successfully developed a plasma process and system technology to remove SU-8 with dry plasma ashing. Also the isotropic etch property of microwave plasma is of advantage to undercut the top layer for removing sacrificial layers.

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	Plasma system with large area planar MW source for low temperature ashing of SU-8 and other sensitive organic layers, used in MEMS fabrication. Substrate size one 300 mm wafer or four wafers of 150 mm
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IoN 10