Photoresist Ashing | Semiconductor Application | PVATePla America, Inc. | 800-527-5667
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 Ashing of Photoresist

The removal of photoresist masks after processes such as etching and implantation, is one of the most important and frequently performed steps in front-end semiconductor manufacturing. Depending on the complexity of the devices concerned, the number of lithography cycles can vary from 10 to 25. Each cycle requires a photoresist removal process. This process of stripping the photoresist mask is carried out in a dry, eco-friendly process using plasma (‘ashing’). PVA TePla is the market leader for batch plasma photoresist ashers using microwave excitation. Microwave batch plasma technology enables high throughput rates at low cost. The cost of ownership is only a fraction of the equivalent cost for single-wafer ashers. Plasma excitation by means of microwaves causes no damage to the gate oxides and exhibits much higher ashing rates compared conventional radio frequency plasma ashers.

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Related Products:
1
PS 300 The PS 300 series of microwave batch resist ashers ranges from manual to fully automated accommodating wafers from 2" to 8" (50 to 200 mm)
PS 300 Series
b
Fully automatic single wafer resist
stripping system for implant resist
and MEMS applications for wafers
up to 300 mm
PS 90
b
PS 4008
Plasma system with large area planar source technology for low temperature ashing of SU-8 and other sensitive organic layers. Used in MEMS fabrication and OLED/PLED development. Holds one 300 mm wafer or four 150 mm wafers
PS 4008
c
M4L Laboratory or pilot scale bench top microwave system ideal for resist ashing, wafer cleaning and decapsulation of electronic devices
PS 210
PS 600 The PS600 is a RF type Batch Plasma asher for semiconductor frontend applications. It is the pendant to our Microwave Plasma System 300 but operates with 13.56 MHz.
PS 600
E

 

 

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