The removal of photoresist masks after processes such as etching and ion implantation, is one of the most important and frequently performed steps in front-end semiconductor manufacturing. Depending on the complexity of the devices concerned, the number of lithography cycles can vary typically from 10 to 25. Each cycle requires a photo- resist removal process. This process of stripping the photoresist mask is carried out in a dry, eco-friendly process using plasma (‘ashing’). PVA TePla is the market leader for Batch Plasma Ashers using microwave excitation and also offers Microwave Single Wafer Ashers.  Microwave plasma is ideal for resist removal in modern device fabrication, since it produces a very high concentration of chemically active species along with low ion bombardment energy, guaranteeing fast ash rate and a damage-free plasma process at an economic cost level. Microwave plasma systems are suitable for various substrate technologies like Si, III/V-compounds, quartz, ceramic, lithium niobate, copper interconnect devices etc. The inherently isotropic etch characteristic is of advantage for sacrificial layer etch and SU-8 removal in MEMS fabrication.

Typical device markets served are:

• Mixed signal devices, CMOS, Bipolar
• Power Devices
• High Brightness LEDs
• MEMS, SAW-Devices
• Flat Panel Displays (PLEDs)
• III/V-compound materials
• SiC-wafers
• Nano Imprint Lithography, stamper clean

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This series of microwave batch resist ashers ranges from manual to fully automated accommodating wafers from 2" to 8" (50 to 200 mm)