Flat Panel Photoresist Ashing

Fast stripping rates and excellent uniformity over large substrate areas are typical characteristics of PVA TePla’s microwave plasma ashers. Our low pressure MW plasma process benefits from high radical concentration and high plasma density. Atomic and molecular components of MW plasma have low kinetic energy minimizing particle contamination and process induced heating. MW plasma is inherently isotropic providing thorough cleaning, even for fine pitch structures such as pixel reservoirs.

Process Uniformity

Uniformity is essential for maintaining excellent process control on a single substrate, as well as for run-to-run reproducibility. This is an important criteria necessary for meeting high manufacturing standards, particularly for applications such as descum. Process Safety is also a major concern, especially with next generation glass sizes. Plasma produced by microwave excitation provides much greater processing safety compared with RF or RIE plasma technologies, both in terms of surface integrity and electrostatic discharge damage. This is due primarily to the fact that charged species are not accelerated in MW plasma and therefore minimal substrate biasing and no sputtering effects are observed.

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PS 4011